Thermal stability of sputter-deposited TiSi2 films with crystal orientation

TiSi2 thin films were prepared by dc magnetron sputtering using a composite TiSix target in the substrate temperature range of 150-550 degrees C. The as-sputtered TiSi2 films at low temperatures (<250 degrees C) have an amorp hous structure with a resistivity of similar to 250 mu Omega cm, whereas th ose deposited over 450 degrees C have C49 TiSi2 phase with (060) and (131) orientations. The C54 TiSi2 phase having random orientations of (311) and ( 040) is attained after rapid thermal annealing (RTA) at 750 degrees C when deposited at a low temperature regime. The C54 TiSi2 films prepared at 450 degrees C exhibited a preferred orientation of (040) after RTA over 650 deg rees C. The sheet resistance (R-s) of patterned TiSi2/polycrystalline silic on structure is as low as similar to 3 Omega/square, regardless of substrat e temperature, for patterned lines 0.18 mu m wide after furnace annealing o f 800 degrees C for 60 min. We found the R-s dependency of C54 TiSi2 lines on the crystal orientation after furnace annealing of 850 degrees C for 30 min: the structure of C54 TiSi2 (040) orientation is more susceptible than that of randomly oriented C54 TiSi2 (311) and (040) in terms of thermal sta bility. (C) 1999 The Electrochemical Society. S1099-0062(99)06-023-X. All r ights reserved.