Creep and electrical resistivity of metallic glass Ni78B14Si8 under protonirradiation

Authors
Citation
P. Jung, Creep and electrical resistivity of metallic glass Ni78B14Si8 under protonirradiation, J APPL PHYS, 86(9), 1999, pp. 4876-4880
Citations number
46
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
9
Year of publication
1999
Pages
4876 - 4880
Database
ISI
SICI code
0021-8979(19991101)86:9<4876:CAEROM>2.0.ZU;2-E
Abstract
Plastic deformation and electrical resisitivity of the metallic glass Ni78B 14Si8 were measured during 6.3 MeV proton irradiation at approximate to 420 K under tensile stresses up to 430 MPa. Irradiation creep rate depended li nearly on stress sigma and particle flux Phi (or displacement rate K), givi ng epsilon*/sigma Phi approximate to 4.5x10(-33) m(2)/Pa (epsilon*/sigma K approximate to 5x10(-9) Pa-1 dpa(-1)). After recrystallization this value w as reduced by a factor of approximate to 25, falling into the range of poly crystalline pure nickel and dilute Ni alloys. The electrical resisitivity i n the amorphous state was decreasing under irradiation, while the initially lower resistivity of recrystallized material strongly increased. (C) 1999 American Institute of Physics. [S0021-8979(99)07321-1].