InGaAs quantum wires and wells on V-grooved InP substrates

We report on the fabrication and characterization of In1-xGaxAs quantum str uctures on V-grooved InP substrates grown by metalorganic vapor phase epita xy. The geometry of the quantum wells and wires was determined by scanning- electron microscopy and atomic-force microscopy. We optimized the InP buffe r-layer thickness in order to obtain narrow quantum wires. The optical prop erties were studied by photoluminescence (PL) spectroscopy. The PL peaks of the different quantum structures can be identified by a self-aligned maski ng process. The interpretation of the PL measurements was verified by means of cathodoluminescence measurements with high spatial resolution. Transiti on energies were evaluated from the geometry of the quantum wells and quant um wires. The composition of the InGaAs was used as a parameter for the cal culations. By comparison of the measured transition energies with the evalu ated ones we determined the Ga content of the quantum structures. We found the quantum wires nearly lattice matched to the InP substrate and the quant um wells on {111} planes rich in In (1-x=71%). (C) 1999 American Institute of Physics. [S0021-8979(99)00621-0].