GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy

Unstrained Ga0.64In0.36As0.84Sb0.16/InP multiple-quantum-well (MQW) structu re was grown on Fe-doped InP substrate by metalorganic vapor-phase epitaxy. Double-crystal X-ray diffraction (DCXRD) and transmission electron microsc opy (TEM) were used for material evaluation and layer thickness determinati on, We observed sharp and intensive satellite peaks in the X-ray rocking cu rve. In the TEM micrograph, reproducible periodicity with uniform well thic kness and abrupt interface could be clearly seen. The layer widths measured from DCXRD and TEM are in good agreement with the value estimated from the product of growth rate and time. Low-temperature (8 K) photoluminescence s pectroscopy and room-temperature absorption spectroscopy were also used to characterize the MQW structure. The full-width at half-maximum of the (8 K) photoluminescence was 13.4 meV for the MQW structure, which is smaller tha n that of the GaInAsSb bulk layer. Heavy- and light-hole excitons were obse rved in the room-temperature absorption spectrum, which demonstrates that h igh-quality epilayer can be obtained for this system. (C) 1999 Elsevier Sci ence B.V. All rights reserved.