Growth of a GaN layer on a glass substrate by metal organic chemical vapordeposition

This paper reports for the first time the successful growth of a single GaN layer on an amorphous glass substrate using metal organic chemical vapor d eposition (MOCVD) technique. The layers were characterized by room temperat ure photoluminescence and X-ray diffraction measurements. In addition, the lateral overgrowth of GaN on this substrate was also tried, which could pro vide an effective method to obtain high-quality GaN substrates in the near future. In comparison to the overgrowth on sapphire substrate, the lateral overgrowth on our substrate is independent of the mask stripe direction, wh ich could indicate a different growth mechanism. (C) 1999 Elsevier Science B.V. All rights reserved.