Y. Xuan et al., Growth mechanism and effect of deposition rate on crystal orientation in PbTiO3 thin film by metallorganic chemical vapor deposition, J CERAM S J, 107(10), 1999, pp. 955-960
Lead titanate thin films were prepared on cleaved MgO(100) substrate by col
d wall horizontal metallorganic chemical vapor deposition (MOCVD). Crystal
structure of films was examined by X-ray 2 theta/omega scan and X-ray pole-
figure measurements. The growth mechanism of PbTiO3 thin him at the initial
growth stage was characterized using an atomic force microscope (AFM). AFM
results show that the growth mechanism of PbTiO3 thin film on MgO(100) sub
strate is in accordance with layer-by-layer plus islands of Stranski-Krasta
nov mode. Islands formed after two lattice layer with 0.8 nm PbTiO3 film de
position on a MgO (100) substrate. The crystal orientation and surface roug
hness are dependent on deposition rate. (001) and (100) oriented grain were
found at higher deposition rate (>2.5 nm/min). On the other hand, (212) an
d (221) oriented triangular-shaped grain growth was observed at relatively
lower deposition rate (<2.5 nm/min), which lead to an increase of surface r
oughness.