Growth mechanism and effect of deposition rate on crystal orientation in PbTiO3 thin film by metallorganic chemical vapor deposition

Citation
Y. Xuan et al., Growth mechanism and effect of deposition rate on crystal orientation in PbTiO3 thin film by metallorganic chemical vapor deposition, J CERAM S J, 107(10), 1999, pp. 955-960
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
ISSN journal
09145400 → ACNP
Volume
107
Issue
10
Year of publication
1999
Pages
955 - 960
Database
ISI
SICI code
0914-5400(199910)107:10<955:GMAEOD>2.0.ZU;2-J
Abstract
Lead titanate thin films were prepared on cleaved MgO(100) substrate by col d wall horizontal metallorganic chemical vapor deposition (MOCVD). Crystal structure of films was examined by X-ray 2 theta/omega scan and X-ray pole- figure measurements. The growth mechanism of PbTiO3 thin him at the initial growth stage was characterized using an atomic force microscope (AFM). AFM results show that the growth mechanism of PbTiO3 thin film on MgO(100) sub strate is in accordance with layer-by-layer plus islands of Stranski-Krasta nov mode. Islands formed after two lattice layer with 0.8 nm PbTiO3 film de position on a MgO (100) substrate. The crystal orientation and surface roug hness are dependent on deposition rate. (001) and (100) oriented grain were found at higher deposition rate (>2.5 nm/min). On the other hand, (212) an d (221) oriented triangular-shaped grain growth was observed at relatively lower deposition rate (<2.5 nm/min), which lead to an increase of surface r oughness.