Vortex lattice melting in layered HTSC in the field of defects

Authors
Gracheva, ME Kashurnikov, VA Nikitenko, OA Rudnev, IA
Citation
Me. Gracheva et al., Vortex lattice melting in layered HTSC in the field of defects, LOW TEMP PH, 25(10), 1999, pp. 765-768
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
LOW TEMPERATURE PHYSICS
ISSN journal
1063777X → ACNP
Volume
25
Issue
10
Year of publication
1999
Pages
765 - 768
Database
ISI
SICI code
1063-777X(199910)25:10<765:VLMILH>2.0.ZU;2-8
Abstract
The effect of defect potential on the melting temperature of the vortex lat tice in a layered HTSC is investigated. It is found that an increase in the value of the defect potential leads to a shifting of the phase transition point to the critical temperature, thus increasing considerably the range o f the intermediate phase "rotating lattice." (C) 1999 American Institute of Physics. [S1063-777X(99)00310-2].