Proximity phenomena in double-barrier structure NbZr/NbOx/Al/AlOy/NbZr

A tunneling structure NbZr/NbOx/Al/AlOy/NbZr with a thin barrier in the NbZ r/NbOx/Al junction and 4 to 6-nm-thick Al interlayer was prepared and studi ed experimentally. A proximity effect between NbZr and Al through NbOx barr ier has been observed. An electrical voltage was generated in the NbOx barr ier and a coexistence of the proximity effect and applied voltage in the ju nction NbZr/NbOx/Al has been observed. This experiment could be described o n the basis of a model for coherent charge transport in superconducting/nor mal proximity structures. (C) 1999 American Institute of Physics. [S1063-77 7X(99)01310-9].