Infrared laser-induced decomposition of tert-butylsilane for chemical vapour deposition of Si/C/H phases

TEA CO2 laser induced decomposition of tert-butylsilane is controlled by el imination of isobutene and affords solid Si/C/H films whose H-content is de pendent on the laser fluence. The process of the chemical vapour deposition of Si/C/H phases is a unique from the viewpoint that depending on the irra diation conditions different major component of the solid films (either ele mental silicon or-silicon carbide) can be obtained from the only single pre cursor.