Performance of Honeywell RICMOS-IV SOI transistors after irradiation to 27Mrad(Si) by 63.3 MeV protons

We present results of an exposure of Honeywell RICMOS-IV SOI transistors pr oduced in a developmental run to 2 x 10(14) 63.3 MeV protons at the UCD cyc lotron radiation test beam (27 Mrad (Si)). In terms of surface damage, this corresponds to almost twice the dose expected for the CMS pixel detector d uring its useful life at the LHC collider. The irradiated transistors inclu de n-channel MOSFETs similar to the front-end transistors of a pixel readou t suitable for use at hadron colliders. Data are presented for MOSFETs on r adiation-induced changes in thresholds, transconductance, maximum voltage g ain and noise. Circuit simulations using the measured noise data indicate t hat the pixel readout would continue to function satisfactorily in the CMS radiation environment.