Tunneling planer Hall effect in Ni81Fe19/Al2O3/NixFe1-x junction

Authors
Chen, HY Feng, YJ Xiong, CS
Citation
Hy. Chen et al., Tunneling planer Hall effect in Ni81Fe19/Al2O3/NixFe1-x junction, SCI CHINA A, 42(10), 1999, pp. 1103-1109
Citations number
9
Categorie Soggetti
Multidisciplinary
Journal title
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN journal
10016511 → ACNP
Volume
42
Issue
10
Year of publication
1999
Pages
1103 - 1109
Database
ISI
SICI code
1001-6511(199910)42:10<1103:TPHEIN>2.0.ZU;2-L
Abstract
Tunneling planer Hall (TPH) effect in Ni81Fe19/Al2O3/NixFe1-x trilayer junc tion is different from general planer Hall effect in single-layer film or t wo-layer junction. This effect concerns the spin-polarized transport,so tha t the TPH voltage depends on the angle between magnetic vectors of two ferr omagnetic layers. The TPH effect is reported to be influenced by compositio n and magnetic properties of FM layers and the thickness of the insulating layer.