Outer space grown semi-insulating GaAs and its applications

GaAs single crystal has been grown in recoverable satellite. Hall measureme nts indicate that the GaAs shows semi-insulating behavior. The structural p roperties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space -grown GaAs are improved greatly compared with the GaAs single crystal grow n terrestrially. The properties of integrated circuits made by direct ion-i mplantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaA s seriously affects the properties of related devices.