Effect of interface layers on electron field emission properties of amorphous diamond films

Hydrogen-free high sp3 content amorphous diamond (AD) films are deposited o n three different substrates - Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) a nd Si wafers. Electron field emission properties and fluorescent displays o f the above AD films are studied by using a sample diode structure. The com positional profile of the interfaces of AD/Ti/Si and AD/Si is examined by u sing secondary ions mass spectroscopy (SMS). Because of the reaction and in terdiffusion between Ti and C, the formation of a thin TiC intermediate lay er is possible between AD film and Ti/Si substrate. The field emission prop erties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm(2) is obtained under an electric fiel d of 19.7 V/mu m. The value is much more than that of AD/Au/Si and AD/Si un der the same electric field.