Landau levels of negatively charged excitons in GaAs/GaAlAs semiconductor quantum wells

It is shown that in a low magnetic held the energy levels of a negatively c harged exciton should split into Landau levels due to the charge of the cen ter of mass. This original property is expected to allow one to distinguish charged exciton lines from other non mobile and charged electronic excitat ions. Our results, obtained within the variational method, are in qualitati ve agreement with the experimental observations in GaAs/GaAlAs semiconducto r quantum wells in the case of the lowest Landau level. (C) 1999 Elsevier S cience Ltd. All rights reserved.