Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution

Authors
Shamirzaev, TS Zhuravlev, KS Yakusheva, NA
Citation
Ts. Shamirzaev et al., Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution, SOL ST COMM, 112(9), 1999, pp. 503-506
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
112
Issue
9
Year of publication
1999
Pages
503 - 506
Database
ISI
SICI code
0038-1098(1999)112:9<503:FERIHM>2.0.ZU;2-K
Abstract
We report the excitonic photoluminescence of heavily doped GaAs:Mn layers g rown by liquid phase epitaxy from the bismuth solution. The free-exciton li ne dominates in the photoluminescence spectra of the layers with manganese atoms concentration more than 10(19) cm(-3), while impurity bound exciton l ines have more than 10 times weaker intensities. It is shown that the low i ntensity of the bound exciton lines is the result of the ionization of exci ton-impurity complexes by the ionized impurity-induced built-in electric fi eld. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.