Size and shape dependence of the lowest conduction band states in GaAs quantum dots

Citation
Gn. Zhao et al., Size and shape dependence of the lowest conduction band states in GaAs quantum dots, ACT PHY C E, 8(11), 1999, pp. 845-852
Citations number
44
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA-OVERSEAS EDITION
ISSN journal
10003290 → ACNP
Volume
8
Issue
11
Year of publication
1999
Pages
845 - 852
Database
ISI
SICI code
1000-3290(199911)8:11<845:SASDOT>2.0.ZU;2-7
Abstract
Using a recently developed new scheme, we investigated the electronic struc ture of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in Ga As cuboid quantum dots depends on the size and shape of the quantum dots. A s a deduction we also discussed the critical size of direct/indirect transi tion in GaAs quantum wires and thin films.