Actively mode-locked p-Ge laser in Faraday configuration

Citation
Av. Muravjov et al., Actively mode-locked p-Ge laser in Faraday configuration, APPL PHYS L, 75(19), 1999, pp. 2882-2884
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
19
Year of publication
1999
Pages
2882 - 2884
Database
ISI
SICI code
0003-6951(19991108)75:19<2882:AMPLIF>2.0.ZU;2-5
Abstract
Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80-110 cm(-1) radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modul ation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was fou nd previously for Voigt geometry. (C) 1999 American Institute of Physics. [ S0003-6951(99)01045-1].