Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

Authors
Chow, WW Jones, ED Modine, NA Allerman, AA Kurtz, SR
Citation
Ww. Chow et al., Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells, APPL PHYS L, 75(19), 1999, pp. 2891-2893
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
19
Year of publication
1999
Pages
2891 - 2893
Database
ISI
SICI code
0003-6951(19991108)75:19<2891:LGATPI>2.0.ZU;2-M
Abstract
The optical gain spectra for compressive-strained and lattice-matched GaInN As/GaAs quantum wells are computed using a microscopic laser theory. From t hese spectra, the peak gain and carrier radiative decay rate as functions o f carrier density are determined. These dependences allow the study of lasi ng threshold current density for different GaInNAs/GaAs laser structures. ( C) 1999 American Institute of Physics. [S0003-6951(99)05245-6].