Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb

Homoepitaxial growth of Si on high-angle miscut (3.0 degrees) Si(111) subst rates through an overlayer of Pb is shown to occur at 280 degrees C. In thi s work, films can be deposited up to 2000 Angstrom in thickness with no ind ication that this is an upper limit for high-quality epitaxy. Samples were analyzed using Rutherford backscattering spectrometry and cross-sectional t ransmission electron microscopy. It is shown that a distinct range of Pb co verage (0.8-1.0 monolayer) results in the best quality growth, with no meas urable amount of Pb trapped at either the interface or within the grown fil ms. (C) 1999 American Institute of Physics. [S0003-6951(99)02345-1].