GaN epitaxial lateral overgrowth and optical characterization

We demonstrate the epitaxial lateral overgrowth (ELO) of GaN from narrow st ripes with triangular cross sections by atmospheric pressure metal organic chemical vapor deposition, and characterize the optical properties of these stripes at each stage of the growth using spatially resolved cathodolumine scence spectroscopy, wavelength imaging, and line scans. An improvement of the optical quality of the GaN materials grown by the ELO technique is clea rly shown by the appearance of a free exciton peak, the enhancement of band edge emission, and the weakening of the yellow emission. (C) 1998 American Institute of Physics.