Citation
R. Hartmann et al., Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements, APPL PHYS L, 73(9), 1998, pp. 1257-1259
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
73
Issue
9
Year of publication
1998
Pages
1257 - 1259
Database
ISI
SICI code
0003-6951(199808)73:9<1257:BGABAO>2.0.ZU;2-6
Abstract
The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs)
is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC
layers indicate a type-I band alignment. Values for the conduction-band an
d valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. V
ariation of the strain in the pseudomorphic layers reveals a lowering of th
e gap energy for exactly strain-compensated SiGeC compared to compressive S
iGeC. A model is developed which explains this energy behavior in terms of
band offsets and confinement shifts. The band alignments of strain-reduced
Si/SiGeC and Si/SiC are compared. (C) 1998 American Institute of Physics. [
S0003-6951(98)00335-0].