Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

Authors
Zhang, BP Li, YQ Yasuda, T Wang, WX Segawa, Y Edamatsu, K Itoh, T
Citation
Bp. Zhang et al., Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy, APPL PHYS L, 73(9), 1998, pp. 1266-1268
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
9
Year of publication
1998
Pages
1266 - 1268
Database
ISI
SICI code
0003-6951(199808)73:9<1266:IPATIO>2.0.ZU;2-J
Abstract
We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) e mbedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation inten sity. This indicates that the ionization of the QDs is determined predomina ntly by thermal excitation of carriers into the ZnSe matrix. (C) 1998 Ameri can Institute of Physics. [S0003-6951(98)03135-0].