Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

Authors
Woicik, JC Gupta, JA Watkins, SP Crozier, ED
Citation
Jc. Woicik et al., Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001), APPL PHYS L, 73(9), 1998, pp. 1269-1271
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
9
Year of publication
1998
Pages
1269 - 1271
Database
ISI
SICI code
0003-6951(199808)73:9<1269:BSIBGT>2.0.ZU;2-A
Abstract
The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy film s grown coherently on InP(001) have been determined by high-resolution exte nded x-ray absorption fine-structure measurements. Comparison with a random -cluster calculation demonstrates that the external in-plane epitaxial stra in imposed by pseudomorphic growth opposes the natural bond-length distorti ons due to alloying. (C) 1998 American Institute of Physics. [S0003-6951(98 )03235-5].