Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydroen-indium vacancy complex VInH4 in liquid encapsu lated Czochralski undoped and Fe-doped n-type InP has been studied by low-t emperature infrared absorption spectroscopy. The VInH4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to simi lar to 10(16) cm(-3) in as-grown liquid encapsulated Czochralski InP. The c oncentration of the VInH4 complex is found to increase with the compensatio n ratio in good agreement with the proposed defect formation model of Waluk iewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amph oteric defects. (C) 1998 American Institute of Physics, [S0003-6951(98)0443 5-0].