A field emitter array with an amorphous silicon thin-film transistor on glass

We have designed and fabricated a field emitter array (FEA) with an amorpho us silicon thin-film transistor (a-Si TFT) monolithically, as an emission c ontrol device, bn a glass substrate. The TFT was fabricated on the glass su bstrate at a low temperature, less than 350 degrees C. The measured emissio n characteristics showed that the FEA had saturated emission currents with the aid of the a-Si TFT; thus the a-Si TFT is expected to stabilize the emi ssion current. The emission current of the FEA was controlled in the range of 0-0.12 mu A With the TFT-gate voltage from 0 to 15 V. (C) 1998 American Institute of Physics. [S0003-6951(98)02435-8].