E. Abou-allam et al., A self-consistent lumped radio frequency linear network model for MOSFETs taking into account the gate resistance, CAN J PHYS, 77(5), 1999, pp. 371-384
This paper describes a self-consistent lumped linear network model for MOSF
ETs that takes into account the distributed nature of the gate resistance.
The model is verified with experimental results. The self-consistent model
consists of placing a lumped resistance in series with the gate. The lumped
resistance takes the value of the total gate resistance divided by a facto
r of three. To second order in j omega, this is shown to be almost an exact
approximation in determining all y-parameters and the equivalent noise res
istance. The third-order terms, however, give rise to a 17% error. The valu
e of f(t) for a MOS transistor shows no dependence with the gate resistance
to all orders in j omega. Furthermore, we also show that the thermal noise
arising from the distributed gate resistance does not contribute to any ad
ditional equivalent input current noise.