A self-consistent lumped radio frequency linear network model for MOSFETs taking into account the gate resistance

This paper describes a self-consistent lumped linear network model for MOSF ETs that takes into account the distributed nature of the gate resistance. The model is verified with experimental results. The self-consistent model consists of placing a lumped resistance in series with the gate. The lumped resistance takes the value of the total gate resistance divided by a facto r of three. To second order in j omega, this is shown to be almost an exact approximation in determining all y-parameters and the equivalent noise res istance. The third-order terms, however, give rise to a 17% error. The valu e of f(t) for a MOS transistor shows no dependence with the gate resistance to all orders in j omega. Furthermore, we also show that the thermal noise arising from the distributed gate resistance does not contribute to any ad ditional equivalent input current noise.