Gaseous D-atoms are evidenced to react directly with adsorbed HS species, f
orming HD(g) and S remaining on the surface or HDS desorbing from the surfa
ce. On the other hand, exposing a D-covered GaAs(100) surface to H2S molecu
les causes a gradual decrease in the amount of adsorbed D-atoms and promote
s the formation of HS(ad) without the observation of accompanying H(ad). Th
e pure HS species covered surface generated by the coadsorption of H2S and
D-atoms may lead to a more efficient S-passivation upon thermal annealing.
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