Interaction of atomic hydrogen, HS and H2S on GaAs(100)

Citation
Z. Zou et al., Interaction of atomic hydrogen, HS and H2S on GaAs(100), CHEM P LETT, 312(2-4), 1999, pp. 149-154
Citations number
34
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
312
Issue
2-4
Year of publication
1999
Pages
149 - 154
Database
ISI
SICI code
0009-2614(19991022)312:2-4<149:IOAHHA>2.0.ZU;2-V
Abstract
Gaseous D-atoms are evidenced to react directly with adsorbed HS species, f orming HD(g) and S remaining on the surface or HDS desorbing from the surfa ce. On the other hand, exposing a D-covered GaAs(100) surface to H2S molecu les causes a gradual decrease in the amount of adsorbed D-atoms and promote s the formation of HS(ad) without the observation of accompanying H(ad). Th e pure HS species covered surface generated by the coadsorption of H2S and D-atoms may lead to a more efficient S-passivation upon thermal annealing. (C) 1999 Elsevier Science B.V. All nights reserved.