D. Rowlands et S. Dimitrijev, Nonlinear variance model for analysis of effects of process-parameter fluctuations, ELECTR LETT, 35(21), 1999, pp. 1836-1837
A nonlinear variance equation has been derived and applied to the threshold
voltage of a 0.1 mu m SOI MOS device. The equation enabled an analysis of
the effects of process-parameter fluctuations to be made. The analysis show
ed that the effect of the nonlinear terms (15.48%) is more important than t
he effect of the mixed term (0.02%), and almost as important as the contrib
ution of the second most dominant input-process parameter (21.98%). This il
lustrates the importance of the proposed nonlinear equation.