3.9W CW power from sub-monolayer quantum dot diode laser

Authors
Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Ustinov, VM Livshits, DA Tarasov, IS Bedarev, DA Maximov, MV Tsatsul'nikov, AF Soshnikov, IP Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation
Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
21
Year of publication
1999
Pages
1845 - 1847
Database
ISI
SICI code
0013-5194(19991014)35:21<1845:3CPFSQ>2.0.ZU;2-#
Abstract
Diode lasers emitting at 947nm with sub-monolayer deposited InAs/GaAs quant um dots in the active region have been fabricated. The 3.9W output power li mited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10 degrees C in 100 mu m wide stripes with uncoated facets.