Logic circuit elements using single-electron tunnelling transistors

Citation
Nj. Stone et H. Ahmed, Logic circuit elements using single-electron tunnelling transistors, ELECTR LETT, 35(21), 1999, pp. 1883-1884
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
21
Year of publication
1999
Pages
1883 - 1884
Database
ISI
SICI code
0013-5194(19991014)35:21<1883:LCEUST>2.0.ZU;2-2
Abstract
Logic elements have been demonstrated using single-electron tunnelling tran sistors. The transistors are biased at different positions in the conductan ce oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K desp ite the low gain of thr transistors.