Citation
Jy. Wang et al., Method to measure MOSFET inversion layer mobility, ELECTR LETT, 35(21), 1999, pp. 1884-1886
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
35
Issue
21
Year of publication
1999
Pages
1884 - 1886
Database
ISI
SICI code
0013-5194(19991014)35:21<1884:MTMMIL>2.0.ZU;2-#
Abstract
Accurate channel mobility is obtained with a new method at different drain
and substrate biases. This method allows the channel mobility and electric
field to be obtained over a wide range of voltages (V-DS = 0.02 - 1V). The
plot of mobility against electric field shows a universal curve that is ind
ependent of the drain and substrate bias.