Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

Authors
Han, IY Ser, JH Ryu, HY Lee, YH
Citation
Iy. Han et al., Oxide-apertured photodetector integrated on vertical cavity surface emitting laser, ELECTR LETT, 35(20), 1999, pp. 1742-1743
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
20
Year of publication
1999
Pages
1742 - 1743
Database
ISI
SICI code
0013-5194(19990930)35:20<1742:OPIOVC>2.0.ZU;2-N
Abstract
The authors have designed and fabricated oxide-apertured photodetectors Int egrated with vertical cavity surface emitting lasers (VCSELs). The photocur rent originating from spontaneous emission is suppressed by more than a fac tor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable in ternal loss from the detector is minimised by locating the GaAs detection l ayer as far as possible from the VCSEL cavity.