Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at lambda=3.30 mu m

Authors
Lee, H Olafsen, LJ Menna, RJ Bewley, WW Martinelli, RU Vurgaftman, I Garbuzov, DZ Felix, CL Maiorov, M Meyer, JR Connolly, JC Sugg, AR Olsen, GH
Citation
H. Lee et al., Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at lambda=3.30 mu m, ELECTR LETT, 35(20), 1999, pp. 1743-1745
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
20
Year of publication
1999
Pages
1743 - 1745
Database
ISI
SICI code
0013-5194(19990930)35:20<1743:RTWQWD>2.0.ZU;2-K
Abstract
A mid-IR type-II 'W' quantum well diode laser (lambda = 3.30 mu m) with a b roadened waveguide operated in pulsed mode at 300K is presented. The spectr al width at that temperature was 12nm, and the peak output power was 2mW/fa cet. The characteristic temperature T-0 for the range 100-280K was 48K.