Very low threshold lasing in Er3+ doped ZBLAN microsphere

Authors
von Klitzing, W Jahier, E Long, R Lissillour, F Lefevre-Seguin, V Hare, J Raimond, JM Haroche, S
Citation
W. Von Klitzing et al., Very low threshold lasing in Er3+ doped ZBLAN microsphere, ELECTR LETT, 35(20), 1999, pp. 1745-1746
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
20
Year of publication
1999
Pages
1745 - 1746
Database
ISI
SICI code
0013-5194(19990930)35:20<1745:VLTLIE>2.0.ZU;2-U
Abstract
A green room temperature up-conversion laser has been demonstrated in a 120 mu m diameter microsphere of Er3+ doped ZBLAN. Lasing occurs around 540nm with a 801nm diode laser pump. The lasing threshold of only 30 mu W of abso rbed power is over two orders of magnitude lower than the lowest previously observed.