All-silicon optically-interrogated power sensor for microwaves and millimetre waves

Authors
Rendina, I Della Corte, FG Iodice, M Massa, R Panariello, G Cocorullo, G
Citation
I. Rendina et al., All-silicon optically-interrogated power sensor for microwaves and millimetre waves, ELECTR LETT, 35(20), 1999, pp. 1748-1749
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
20
Year of publication
1999
Pages
1748 - 1749
Database
ISI
SICI code
0013-5194(19990930)35:20<1748:AOPSFM>2.0.ZU;2-1
Abstract
A new non-disturbing optically interrogated silicon sensor for measuring el ectromagnetic power in the microwave and millimetre-wave range is presented . A prototype was realised and then tested in the microwave frequency range 2.5-18GHz. A minimum detectable electromagnetic power density of similar t o 1.4mW/cm(2) was measured. Higher performances are expected, according to simulations, in optimised devices.