The finite-temperature photoluminescence correlation function in semiconductor heterostructures

We report the inclusion of temperature effects on the Mahan-Nozieres-De Dom inicis framework to study both many-body and temperature effects in photolu minescence spectra of doped semiconductors. The electronic part of the corr elation function characterizes the photoluminescence spectra. We have treat ed the optical valence hole as a localized scattering potential center and studied effects of the electron-hole interaction enhancement on the photolu minescence spectra leading to the appearance of shake-up structures. We als o have identified a term in the correlation function which represents the f inite temperature contribution to the intensities of the shake-up structure s. The method is used to study the magnetophotoluminescence of modulation-d oped quantum wells with a weak periodic lateral potential.