An analysis of disorder in thin silicon oxide coatings

Citation
Ua. Handge et al., An analysis of disorder in thin silicon oxide coatings, EUROPH LETT, 48(3), 1999, pp. 280-285
Citations number
19
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
02955075 → ACNP
Volume
48
Issue
3
Year of publication
1999
Pages
280 - 285
Database
ISI
SICI code
0295-5075(199911)48:3<280:AAODIT>2.0.ZU;2-2
Abstract
We analyze theoretically and experimentally the influence of disorder in th in brittle coatings on their fragmentation kinetics. It turns out that in l inear bond-network models the mean fragment length [L] scales with the appl ied strain epsilon, i.e. [L] proportional to epsilon(-alpha), with alpha de pending on the degree of disorder in the coating. Experimentally we monitor the fragmentation of thin silicon oxide coatings. The analysis of the frag mentation kinetics reveals that (L) proportional to epsilon(-alpha) is well fulfilled and that a ranges from 1/3 to 1/2, being in very good agreement with the theory.