Accurately modeling the drain to source current in recessed gate P-HEMT devices

In this letter, a continuous nonlinear model for the I-ds current source in recessed gate pseudomorphic HEMT heterostructures is proposed. A careful c haracterization of the dc, pulsed, and small-signal nonlinear distortion be havior of this predominant nonlinearity has been employed in order to extra ct the model parameters. Being able to reproducing the current-voltage (I-V ) behavior as well as the higher order derivatives of the transconductance and output conductance, the equation is valid for an accurate control of th e critical nonlinear distortion phenomena in HEMT applications. Comparisons between measured and simulated results will prove its validity under both static and dynamic conditions for either large- or small-signal operation.