Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors

A reverse short-channel effect, manifested by an increase in the transistor threshold voltage as the channel length is reduced, is observed in convent ional metal-induced laterally crystallized thin-film transistors. Such an e ffect has not been observed in regular solid phase crystallized thin-film t ransistors and can be eliminated by a brief hydrogen plasma treatment.