A novel ultrathin elevated channel low-temperature poly-Si TFT

Citation
Sd. Zhang et al., A novel ultrathin elevated channel low-temperature poly-Si TFT, IEEE ELEC D, 20(11), 1999, pp. 569-571
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
11
Year of publication
1999
Pages
569 - 571
Database
ISI
SICI code
0741-3106(199911)20:11<569:ANUECL>2.0.ZU;2-1
Abstract
A novel ultrathin elevated channel thin film transistor (UT-ECTFT) made usi ng low-temperature poly-Si is proposed. The structure has an ultrathin chan nel region (300 Angstrom) and a thick drain/source region, The thin channel is connected to the heavily doped drain/source through a lightly doped ove rlapped region, The lightly doped overlapped region provides an effective w ay to spread out the electric field at the drain, thereby reducing signific antly the lateral electric field there at high drain bias. Thus, the UT-ECT FT exhibits excellent current saturation characteristics even at high bias (V-ds = 30 V, V-gs = 20 V). Moreover, the UT-ECTFT has more than two times increase in on-state current and 3.5 times reduction in off-state current c ompared to conventional thick channel TFT's.