Role of hole fluence in gate oxide breakdown

A simple model which links the primary hole and Fowler-Nordheim (FN) electr on injections to oxide breakdown is established and the calculation based o n this model is in good agreement with our experiments. When the sum of the active trap density D-pri due to primary hole injection and the active tra p density D-n due to FN electron injection reaches a critical value D-cri, the oxide breaks down. The hole is two orders of magnitude more effective t han FN electron in causing; breakdown. These new findings are imperative in predicting oxide reliability and device lifetime.