In situ-doped amorphous Si0.8Co0.2 emitter bipolar transistors

Authors
Orpella, A Bardes, D Alcubilla, R Marsal, LF Pallares, J
Citation
A. Orpella et al., In situ-doped amorphous Si0.8Co0.2 emitter bipolar transistors, IEEE ELEC D, 20(11), 1999, pp. 592-594
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
11
Year of publication
1999
Pages
592 - 594
Database
ISI
SICI code
0741-3106(199911)20:11<592:ISASEB>2.0.ZU;2-J
Abstract
The fabrication and characterization of in situ-doped amorphous Si0.8C0.2 e mitter transistors are presented. Emitter Gummel numbers exceeding 10(14) s /cm(4) are reported for the first time in this type of structure. The high values obtained for GE are believed to be due to the valance band discontin uity between the Si0.8C0.2 layer and the crystalline part of the emitter, w hich effectively blocks the minority carrier injection from the base into t he noncrystalline part of the emitter.