A 29-mm(2), 1.8-V-only, 16-Mb DINOR flash memory with gate-protected-poly-diode (GPPD) charge pump

Authors
Miyawaki, Y Ishizaki, O Okihara, Y Inaba, T Nitta, F Mihara, M Hayasaka, T Kobayashi, K Omae, T Kimura, H Shimizu, S Makimoto, H Kawajiri, Y Wada, M Sonoyama, K Etoh, J
Citation
Y. Miyawaki et al., A 29-mm(2), 1.8-V-only, 16-Mb DINOR flash memory with gate-protected-poly-diode (GPPD) charge pump, IEEE J SOLI, 34(11), 1999, pp. 1551-1556
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
34
Issue
11
Year of publication
1999
Pages
1551 - 1556
Database
ISI
SICI code
0018-9200(199911)34:11<1551:A211DF>2.0.ZU;2-7
Abstract
A 29-mm(2), 16-Mb divided bitline NOR (DINOR) is fabricated using 0.25-mu m triple-well three-layer-metal technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and elimina tes the body effect problem.