Particle-in-cell/ Monte Carlo simulation of radio frequency SiH4/H-2 discharges

Citation
M. Yan et Wj. Goedheer, Particle-in-cell/ Monte Carlo simulation of radio frequency SiH4/H-2 discharges, IEEE PLAS S, 27(5), 1999, pp. 1399-1405
Citations number
33
Categorie Soggetti
Physics
Journal title
IEEE TRANSACTIONS ON PLASMA SCIENCE
ISSN journal
00933813 → ACNP
Volume
27
Issue
5
Year of publication
1999
Pages
1399 - 1405
Database
ISI
SICI code
0093-3813(199910)27:5<1399:PMCSOR>2.0.ZU;2-H
Abstract
In this paper we report on a study of SiH4/H-2 radio-frequency discharges u sing the particle-in-cell/Monte Carlo (PIC/MC) method. A special procedure based on the rate balance for negative ions has been developed to speed up the simulation for this kind of electronegative discharge. The electron ene rgy distribution function and the angular and energy distribution function of ions arriving at the substrate have been studied at different discharge settings (frequency, pressure, voltage, and power). The simulations show th at the electrons are heated ohmically, so the average electron energy can b e increased only by increasing the voltage, A high radical density, a high and more directional ion flux, and a low average ion energy can be obtained by a combination of a high frequency and a low RF voltage. The behavior of the dissociation rate with the discharge parameters is consistent with the experimentally observed consumption of SiH4. The simulated ion energy dist ribution functions are in good agreement with experimental results.