Stress measurements in Si microelectronics devices using Raman spectroscopy

Authors
De Wolf, I
Citation
I. De Wolf, Stress measurements in Si microelectronics devices using Raman spectroscopy, J RAMAN SP, 30(10), 1999, pp. 877
Citations number
21
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF RAMAN SPECTROSCOPY
ISSN journal
03770486 → ACNP
Volume
30
Issue
10
Year of publication
1999
Database
ISI
SICI code
0377-0486(199910)30:10<877:SMISMD>2.0.ZU;2-G
Abstract
The application of micro-Raman spectroscopy for the measurement of local st ress in silicon microelectronics samples is discussed. Practical issues of concern for local stress measurements using micro-Raman spectroscopy are de alt with. Copyright (C) 1999 John Wiley & Sons, Ltd.