On the extraction of the source and drain series resistances of MOSFETs

This article reviews and scrutinizes various proposed methods to extract th e individual values of drain and source resistances (R-D and R-S) of MOSFET s, which are important device parameters for modeling and circuit simulatio n. In general, these methods contain three basic steps: (1) the extraction of the total drain and source resistance (R-D + R-S); (2) the extraction of the difference between the drain and the source resistances (R-D - R-S); a nd (3) the calculation of R-D and R-S from the knowledge of (R-D + R-S) and (R-D - R-S). These methods are tested and compared in the environments of circuit simulator, device simulation and measurements. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.