M. Vellvehi et al., Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K, MICROEL REL, 39(8), 1999, pp. 1239-1246
The electrical characteristics of advanced 360 V lateral insulated-gate bip
olar transistor (LIGBT) structures operating at cryogenic temperatures are
analysed in this paper. Detailed performed static and dynamic measurements
on ceramic packaged LIGBT structures at 77 K are provided. A reduction of t
he breakdown voltage, the leakage current, the turn-off time and the transi
ent losses has been observed when decreasing the operating temperature. A r
eduction of 70% of the turn-off time and a 45% of switching losses can be o
btained when lowering the temperature from 300 to 77 K. At high current den
sity levels, the on-state voltage drop of the conventional LIGBT structure
increases with temperature. On the contrary, on-state voltage drop of an ad
vanced modified LIGBT structure increases when the temperature is reduced.
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