Application of local-spin-density approximation to a-Si and tetrahedral a-C

Citation
Pa. Fedders et al., Application of local-spin-density approximation to a-Si and tetrahedral a-C, PHYS REV B, 60(15), 1999, pp. 10594-10597
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
15
Year of publication
1999
Pages
10594 - 10597
Database
ISI
SICI code
0163-1829(19991015)60:15<10594:AOLATA>2.0.ZU;2-K
Abstract
We discuss the application of the local-spin-density approximation (LSDA) a nd provide criteria to gauge the reliability of supercell models of a-Si:H and tetrahedral amorphous carbon (ta-C). We identify models of a-Si:H that exhibit a localization on dangling bond consistent with electron-spin-reson ance (ESR) experiments and show that a LSDA level description of the electr on states is essential to describe these states. We offer an ab initio calc ulation of a well-isolated floating bond state and show that neither the ch arge nor spin is well localized. Finally, we suggest the origin of the ESR signal in ta-C is pi-bonded pairs at the Fermi level. [S0163-1829(99)08639- 5].