Scanning tunneling spectroscopy of transition-metal-doped GaSb

Authors
Hidalgo, P Mendez, B Piqueras, J Dutta, PS Dieguez, E
Citation
P. Hidalgo et al., Scanning tunneling spectroscopy of transition-metal-doped GaSb, PHYS REV B, 60(15), 1999, pp. 10613-10615
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
15
Year of publication
1999
Pages
10613 - 10615
Database
ISI
SICI code
0163-1829(19991015)60:15<10613:STSOTG>2.0.ZU;2-I
Abstract
V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples s how a nearly metallic behavior. The surface band gaps in the GaSb matrix ha ve been found to depend on the dopant. [S0163-1829(99)06439-5].