Evidence for electron-hole hybridization in cyclotron-resonance spectra ofInAs/GaSb heterostructures

Authors
Vasilyev, Y Suchalkin, S von Klitzing, K Meltser, B Ivanov, S Kop'ev, P
Citation
Y. Vasilyev et al., Evidence for electron-hole hybridization in cyclotron-resonance spectra ofInAs/GaSb heterostructures, PHYS REV B, 60(15), 1999, pp. 10636-10639
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
15
Year of publication
1999
Pages
10636 - 10639
Database
ISI
SICI code
0163-1829(19991015)60:15<10636:EFEHIC>2.0.ZU;2-C
Abstract
Cyclotron-resonance (CR) experiments have been performed on InAs/GaSb/AlSb double structures, in which electron and hole layers are separated by AlSb barriers. The strength of the electron-hole coupling is altered by varying the barrier width. Our data reveal that properties of InAs/GaSb systems wit h AlSb barriers thinner than 1.5 nm are entirely determined by interlayer t unneling and the CR features in such samples can be explained by hybridizat ion between states in the InAs conduction band and in the GaSb valence band . [S0163-1829(99)14235-8].